A new family of automotive-rated NPN and PNP bipolar transistors bring low losses and high reliability to switching, regulation/conversion, and driving applications. Typical applications include ...

Ultra-Low VCE(sat) NPN and PNP Bipolar Transistors from Diodes Incorporated Maximize Power Density and Efficiency in Compact Automotive Designs Diodes Incorporated (Diodes) (Nasdaq: DIOD) today ...

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This new offering released as MJPE-series addresses the ongoing industry demand for more power-efficient and cost-effective designs in both industrial and automotive applications. Compared to ...

Recently in material science news from China we hear that [Hailin Peng] and his team at Peking University just made the world’s fastest transistor and it’s not made of silicon. Before we tell you ...

Amidst the advances in CMOS and wide bandgap semiconductor technology, you can easily forget that the first transistor invented by William Shockley in 1949 was a bipolar junction transistor (BJT).

IGBT, stands for Insulated Gate Bipolar Transistor. It is a bipolar transistor with an insulated gate terminal. It combines a control input with a MOS structure and a bipolar power transistor in a ...